Introduction to double beam scanning electron microscopy (DB-FIB)

Important equipment for microanalysis techniques include: optical microscopy (OM), double-beam scanning electron microscopy (DB-FIB), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Today’s article will introduce the principle and application of DB-FIB, focusing on the service capability of radio and television metrology DB-FIB and the application of DB-FIB to semiconductor analysis.

What is DB-FIB
Dual-beam scanning electron microscope (DB-FIB) is an instrument that integrates the focused ion beam and scanning electron beam on one microscope, and is equipped with accessories such as gas injection system (GIS) and nanomanipulator, so as to achieve many functions such as etching, material deposition, micro and nano processing.
Among them, the focused ion beam (FIB) accelerates the ion beam generated by liquid gallium metal (Ga) ion source, then focuses on the surface of the sample to generate secondary electron signals, and is collected by the detector. Or use strong current ion beam to etch the sample surface for micro and nano processing; A combination of physical sputtering and chemical gas reactions can also be used to selectively etch or deposit metals and insulators.

Main functions and applications of DB-FIB
Main functions: fixed point cross-section processing, TEM sample preparation, selective or enhanced etching, metal material deposition and insulating layer deposition.
Application field: DB-FIB is widely used in ceramic materials, polymers, metal materials, biology, semiconductor, geology and other fields of research and related product testing. In particular, DB-FIB’s unique fixed-point transmission sample preparation capability makes it irreplaceable in the semiconductor failure analysis capability.

GRGTEST DB-FIB service capability
The DB-FIB currently equipped by the Shanghai IC Test and Analysis Laboratory is the Helios G5 series of Thermo Field, which is the most advanced Ga-FIB series in the market. The series can achieve scanning electron beam imaging resolutions below 1 nm, and is more optimized in terms of ion beam performance and automation than the previous generation of two-beam electron microscopy. The DB-FIB is equipped with nanomanipulators, gas injection systems (GIS) and energy spectrum EDX to meet a variety of basic and advanced semiconductor failure analysis needs.
As a powerful tool for semiconductor physical property failure analysis, DB-FIB can perform fixed-point cross-section machining with nanometer precision. At the same time of FIB processing, the scanning electron beam with nanometer resolution can be used to observe the microscopic morphology of cross-section and analyze the composition in real time. Achieve the deposition of different metallic materials (tungsten, platinum, etc.) and non-metallic materials (carbon, SiO2); TEM ultra-thin slices can also be prepared at a fixed point, which can meet the requirements of ultra-high resolution observation at the atomic level.
We will continue to invest in advanced electronic microanalysis equipment, continuously improve and expand semiconductor failure analysis related capabilities, and provide customers with detailed and comprehensive failure analysis solutions.